Patent · US Expired

Device for driving a memory cell of a memory module by means of a charge store

US7012843B2 · kind B2 · utility

2Cited by

3References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Peter Schroegmeier · Birkenfeld, DE
Thilo Marx · Villingen-Schwenningen, DE
Manfred Dobler · Hersbruck, DE

Key dates

Filing date	Jun 26, 2002
Grant date	Mar 14, 2006
Priority date	—
Expiry date	Jun 26, 2022

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/4085
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A device for driving a memory cell (601) of a memory module which can be operated with an external voltage (VEXT) and an operating frequency (fCLK), whereas the memory cell (601) has a capacitance (600) for storing charges and a transistor (602) for reading charges from the capacitance (600) and for writing charges to the capacitance (600), which transistor can be controlled with a control voltage (VPP), which has a charge store (614) for supplying a control voltage (VPP) which is greater than the external voltage (VEXT). The charge store (614) being able to be charged by the external voltage (VEXT), and the charging of the charge store (614) is able to be controlled by a charging control frequency (fCC) derived from the operating frequency (fCLK) of the memory module.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.