Recording mark formation in a phase change memory material via a predominately capacitive cooling process
US7012874B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 21, 2001 |
| Grant date | Mar 14, 2006 |
| Priority date | — |
| Expiry date | Apr 10, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B7/006
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Methods of writing information to an optical memory device. The methods comprise the step of writing a mark to the active material of the optical memory device by irradiating the material with an applied energy source. In one embodiment, the applied energy source provides a plurality of energy pulses. In another embodiment, energy in excess of that required to form a mark is released and dissipated in a manner that minimizes mark enlargement, spurious mark formation, recrystallization and back crystallization. The methods are effective to provide better cooling characteristics through enhancement of the capacitive cooling contribution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.