Semiconductor light emitting device and method
US7015054B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2003 |
| Grant date | Mar 21, 2006 |
| Priority date | — |
| Expiry date | Mar 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
Abstract
A light-emitting device includes: a semiconductor structure formed on one side of a substrate, the semiconductor structure having a plurality of semiconductor layers and an active region within the layers; and first and second conductive electrodes contacting respectively different semiconductor layers of the structure; the substrate comprising a material having a refractive index n>2.0 and light absorption coefficient α, at the emission wavelength of the active region, of α>3 cm−1. In a preferred embodiment, the substrate material has a refractive index n>2.3, and the light absorption coefficient, α, of the substrate material is α<1 cm−1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.