Technique for forming the deep doped columns in superjunction
US7015104B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | May 28, 2004 |
| Grant date | Mar 21, 2006 |
| Priority date | — |
| Expiry date | Aug 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device is disclosed and starts with a semiconductor substrate having a heavily doped N region of at the bottom main surface and having a lightly doped N region at the top main surface. There are a plurality of trenches in the substrate, with each trench having a first extending portion extending from said top main surface towards the heavily doped region. Each trench has two sidewall surfaces in parallel alignment with each other. A blocking layer is formed on the sidewalls and the bottom of each trench. Then a P type dopant is obliquely implanting into the sidewall surfaces to form P type doped regions. The blocking layer is then removed. The bottom of the trenches is then etched to remove any implanted P type dopants. The implants are diffused and the trenches are filled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.