System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US7015422B2 · kind B2 · utility
57Cited by
114References
95Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 7, 2001 |
| Grant date | Mar 21, 2006 |
| Priority date | — |
| Expiry date | Jul 18, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B5/124
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Various processes for heating semiconductor wafers is disclosed. In particular, the present invention is directed to configuring light sources emitting light energy onto a wafer in order to optimize absorption of the energy by the wafer. Optimization is carried out by varying the angle of incidence of the light energy contacting the wafer, using multiple wavelengths of light, and configuring the light energy such that it contacts the wafer in a particular polarized state. In one embodiment, the light energy can be emitted by a laser that is scanned over the surface of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.