Gallium nitride-based light emitting device and method for manufacturing the same
US7015511B2 · kind B2 · utility
16Cited by
33References
14Claims
0Family size
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Key dates
| Filing date | Jun 27, 2002 |
| Grant date | Mar 21, 2006 |
| Priority date | — |
| Expiry date | Oct 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
For a light emitting device using gallium nitride (GaN), on a substrate are sequentially formed a GaN-based layer, an AlGaN-based layer, and a light emitting layer. To prevent cracks in the AGaN-based layer, the AlGaN-based layer is formed before planarization of the surface of the GaN layer on a surface of the GaN layer which is not planar. For a laser, the AlGaN-based layers serve as clad layers which sandwich the light emitting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.