Group III nitride compound semiconductor device having a superlattice structure
US7015515B2 · kind B2 · utility
17Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2002 |
| Grant date | Mar 21, 2006 |
| Priority date | — |
| Expiry date | Jul 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After one of layers constituting a superlattice structure is formed by an MOCVD method, NH3 gas is circulated together with H2 gas as a carrier gas to thereby perform a purge step. After the purge step, a next layer is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.