Deterministically doped field-effect devices and methods of making same
US7015546B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2003 |
| Grant date | Mar 21, 2006 |
| Priority date | — |
| Expiry date | Aug 21, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Deterministically doped field-effect devices and methods of making same. One or more dopant atoms, also referred to as impurities or impurity atoms, are arranged in the channel region of a device in engineered arrays. Component atoms of an engineered array are substantially fixed by controlled placement in order to provide a barrier topology designed to control of source-drain carrier flow to realize an ultra-small device with appropriate, consistent performance characteristics. Devices can be made by placing atoms using proximity probe manipulation, ion implantation, by facilitating self-assembly of the atoms as necessary, or other techniques. These atomic placement techniques are combined in example embodiments with traditional methods of forming a substrate, insulators, gates, and any other structural elements needed in order to produce practical field-effect devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.