Patent · US Expired

EEPROM memory matrix and method for safeguarding an EEPROM memory matrix

US7015821B2 · kind B2 · utility

3Cited by

5References

5Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Susanne Gamperl · Vogach, DE
Siegfried Tscheternigg · Vilgertshofen, DE
Armin Wedel · Mering, DE

Key dates

Filing date	Aug 12, 2004
Grant date	Mar 21, 2006
Priority date	—
Expiry date	Aug 12, 2024

Classification

Technology area (CPC G)Physics
CPC primaryG11C16/22
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

EEPROM memory matrix in which column lines are alternatively used as detector lines. A precharge voltage is applied to selected detector lines together with the relevant column line in each case before read-out of the memory columns. If a detector line loses its precharge level during the read-out of the memory cells, light incidence is assumed and a corresponding alarm function is triggered. Preferably column lines adjacent to the column lines that are respectively selected for the data transmission are connected as detector lines.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.