Composition for polishing semiconductor layers
US7018560B2 · kind B2 · utility
29Cited by
14References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2003 |
| Grant date | Mar 28, 2006 |
| Priority date | — |
| Expiry date | Mar 31, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An aqueous polishing composition comprises a corrosion inhibitor for limiting removal of an interconnect metal with an acidic pH. The composition includes an organic-containing ammonium salt formed with R1, R2, R3 and R4 are radicals, R1 has a carbon chain length of 2 to 15 carbon atoms. The organic-containing ammonium salt has a concentration that accelerates TEOS removal and decreases removal of at least one coating selected from the group consisting of SiC, SiCN, Si3N4 and SiCO.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.