Patent · US Expired

High resistivity silicon carbide single crystal

US7018597B2 · kind B2 · utility

12Cited by

2References

21Claims

0Family size

Assignee

Norstel AB · SE

Inventors

Alexandre Ellison · Säter, SE
Nguyen Tien Son · Säter, SE
Björn Magnusson · Säter, SE
Erik Janzen · Borensberg, SE

Key dates

Filing date	Oct 28, 2002
Grant date	Mar 28, 2006
Priority date	—
Expiry date	Dec 19, 2022

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B29/36
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

The purpose of the invention is to provide a high resistivity silicon carbide substrate with electrical properties and structural quality suitable for subsequent device manufacturing, such as for example high frequency devices, so that the devices can exhibit stable and linear characteristics and to provide a high resistivity silicon carbide substrate having a low density of structural defects and a substantially controlled uniform radial distribution of its resistivity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.