Norstel AB
7Patents
3Active
7Granted
33Portfolio score
Filing activity: Oct 28, 2002 → Dec 29, 2011 · 2 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7531433B2 | Homoepitaxial growth of SiC on low off-axis SiC wafers | Emerging Cross-Sectional Technologies | 15 | Expired |
| US7361222B2 | Device and method for producing single crystals by vapor deposition | Emerging Cross-Sectional Technologies | 13 | Expired |
| US7018597B2 | High resistivity silicon carbide single crystal | Chemistry; Metallurgy | 12 | Expired |
| US8492772B2 | Homoepitaxial growth of SiC on low off-axis SiC wafers | Emerging Cross-Sectional Technologies | 2 | Active |
| US7482068B2 | Lightly doped silicon carbide wafer and use thereof in high power devices | Emerging Cross-Sectional Technologies | 1 | Expired |
| US8097524B2 | Lightly doped silicon carbide wafer and use thereof in high power devices | Emerging Cross-Sectional Technologies | 0 | Active |
| US8803160B2 | Lightly doped silicon carbide wafer and use thereof in high power devices | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.