Method for forming pattern and treating agent for use therein
US7018785B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2001 |
| Grant date | Mar 28, 2006 |
| Priority date | — |
| Expiry date | May 31, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/168
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming resist patterns comprises the steps of (a) applying and forming a chemically amplified photoresist film, (b) applying a treating agent with a pH value of 1.3 to 4.5 onto said chemically amplified photoresist film, (c) baking said chemically amplified photoresist film after at least one of the steps of applying and forming said chemically amplified photoresist film and applying said treating agent, (d) selectively exposing said chemically amplified photoresist film, (e) post exposure-baking said chemically amplified photoresist film, and (f) developing said chemically amplified photoresist film, wherein the contact angle of a non-exposed portion of said chemically amplified photoresist film to a developing solution after wash with water to remove the treating agent on the photoresist and spin-drying before development is made lower by 10° to 110° than that in the case where said treating agent is not applied. In this method, the wetting property of the developing solution to the photoresist film are improved and the influence of floating basic species are reduced by the action of an acid component such as organic acid contained in the treating agent to form resis…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.