Method to form local “silicon-on-nothing” or “silicon-on-insulator” wafers with tensile-strained silicon

US7018882B2 · kind B2 · utility

Assignee

• Sharp Laboratories of America, Inc. · US

Inventors

• Douglas J. Tweet · Camas, US
• Sheng Teng Hsu · Camas, US
• Jer-Shen Maa · Vancouver, US

Key dates

• Filing date: Mar 23, 2004
• Grant date: Mar 28, 2006
• Expiry date: Mar 23, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A method of forming a substrate for use in IC device fabrication includes preparing a silicon substrate, including doping a bulk silicon (100) substrate with ions taken from the group of ions to form a doped substrate taken from the group of doped substrates consisting of n-type doped substrates and p-type doped substrates; forming a first relaxed SiGe layer on the silicon substrate; forming a first tensile-strained silicon cap on the first relaxed SiGe layer; forming a second relaxed SiGe layer on the first tensile-strained silicon cap; forming a second tensile-strained silicon cap on the second relaxed SiGe layer; and completing an IC device.