Gate dielectric and method
US7018902B2 · kind B2 · utility
46Cited by
13References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 10, 2002 |
| Grant date | Mar 28, 2006 |
| Priority date | — |
| Expiry date | Oct 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0181
Abstract
A MOSFET structure with high-k gate dielectric layer and silicon or metal gates, amorphizing treatment of the high-k gate dielectric layer as with a plasma or ion implantation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.