Plasma treatment method to reduce silicon erosion over HDI silicon regions
US7018928B2 · kind B2 · utility
3Cited by
4References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 4, 2003 |
| Grant date | Mar 28, 2006 |
| Priority date | — |
| Expiry date | Feb 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for reducing the loss of silicon in a plasma assisted photoresist etching process including providing a silicon substrate including a polysilicon gate structure; masking a portion of the silicon substrate with photoresist to carry out an ion implantation process for forming source and drain regions; carrying out an ion implantation process; and, removing the photoresist according to at least one plasma assisted process wherein the at least one plasma assisted process comprises fluorine containing, oxygen, and hydrogen containing plasma source gases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.