Method of forming a metal-insulator-metal capacitor
US7018933B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2003 |
| Grant date | Mar 28, 2006 |
| Priority date | — |
| Expiry date | Jan 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal-insulator-metal (MIM) capacitor of a semiconductor device, and a manufacturing method thereof, includes a lower electrode formed of a refractory metal or a conductive compound including the refractory metal, a dielectric film formed of a high dielectric material, and an upper electrode formed of a platinum-family metal or a platinum-family metal oxide. Accordingly, the MIM capacitor satisfies the criteria of step coverage, electrical characteristics and manufacturing costs, as compared to a conventional MIM capacitor in which the upper and lower electrodes are formed of the same material such as a platinum-family metal, a refractory metal or a conductive compound including the refractory metal. The capacitor is especially suitable for mass production in semiconductor fabrication processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.