Memory unit with sensing current stabilization
US7020036B2 · kind B2 · utility
3Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2004 |
| Grant date | Mar 28, 2006 |
| Priority date | — |
| Expiry date | Nov 8, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/063
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory unit with sensing current stabilization includes: a memory cell; a reference cell for providing a reference current; a current mirror coupled to the memory cell and the reference cell for generating a differential current according to the reference current and a cell current of the memory cell; and a sense amplifier coupled to the current mirror for generating an output voltage according to the differential current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.