Field-effect transistor with horizontal self-aligned gates and the production method therefor

US7022562B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

• Simon Deleonibus · Le Pont-de-Claix, FR

Key dates

• Filing date: Aug 30, 2002
• Grant date: Apr 4, 2006
• Expiry date: Aug 30, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6734

Abstract

A field-effect transistor including: a support substrate, an active area forming a channel; a first active gate which is associated with a first face of the active area; source and drain areas which are formed in the active area and which are self-aligned on the first gate; a second insulated gate which is associated with a second face of the active region opposite the first face of the active region. According to the invention, the second gate is self-aligned on the first gate and, together with the first gate, forms a mesa structure on a support substrate.