Method for the selective formation of a silicide on a wafer using an implantation residue layer
US7022595B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2004 |
| Grant date | Apr 4, 2006 |
| Priority date | — |
| Expiry date | Jun 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for the selective formation of a suicide on a slice of semiconductor material that comprises exposed regions to be silicided and exposed regions not to be silicided, comprising the following steps: a) forming a resist thin mask on top of the regions not to be silicided; b) implanting ions wafer-scale through said mask so as to form beneath the resist layer an implantation residue layers using the resist layer; c) removing the resist layer; d) depositing conformally a metal layer on the wafer; e) performing rapid heat treatment so as to form a silicide by siliciding the metal deposited at step d); and f) removing the metal that has not reacted to the heat treatment of step e).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.