Method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes
US7022597B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2004 |
| Grant date | Apr 4, 2006 |
| Priority date | — |
| Expiry date | Jul 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes includes forming a transparent conductive film on a GaN layer, forming a transparent conductive hetero-junction of opposing electrical characteristics on a transparent conductive film on the surface of the GaN layer through an ion diffusion process, and laying a metallic thick film on the surface of the transparent conductive hetero-junction for wiring process in the later fabrication operation. Thus through the electron and hole tunneling effect in the ion diffusion process the Fermi level of the hetero-junction may be improved to form an ohmic contact electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.