Electrically programmable memory element with improved contacts
US7023009B2 · kind B2 · utility
174Cited by
4References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 19, 2004 |
| Grant date | Apr 4, 2006 |
| Priority date | — |
| Expiry date | May 19, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electrically operated memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contact being a thin-film layer having a sidewall electrical coupled to the memory material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.