Si/C superlattice useful for semiconductor devices
US7023010B2 · kind B2 · utility
7Cited by
7References
55Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2004 |
| Grant date | Apr 4, 2006 |
| Priority date | — |
| Expiry date | Jun 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
Abstract
A Si/C superlattice useful for semiconductor devices comprises a plurality of epitaxially grown silicon layers alternating with carbon layers respectively adsorbed on surfaces of said silicon layers. Structures and devices comprising the superlattice and methods are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.