Display device with active-matrix transistor having silicon film modified by selective laser irradiation
US7023500B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2003 |
| Grant date | Apr 4, 2006 |
| Priority date | — |
| Expiry date | Jan 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An active matrix display device is provided which includes an active matrix substrate having a modified region which is formed by applying laser beams selectively to a silicon film formed on an insulating board. Active circuits, which include pixel circuits, are formed in the modified region. The pitch of the pixel circuits formed in a display region of the active matrix substrate, which display region is in the modified region, is set to be substantially equal to a pitch of peripheral circuits formed in the modified region in a peripheral region of the active matrix substrate. In addition, the pitch of the pixel circuits can be set to be substantially twice the pitch of the pixels themselves.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.