Method for creating gated filament structures for field emission displays
US7025892B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 1995 |
| Grant date | Apr 11, 2006 |
| Priority date | — |
| Expiry date | Jan 31, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J31/127
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method is provided for creating gated filament structures for a field emission display. A multi-layer structure is provided that includes a substrate, an insulating layer and a metal gate layer positioned on at least a portion of a top surface of the insulating layer. A plurality of patterned gates are also provided in order to define a plurality of gate apertures on the top surface of the insulating layer. A plurality of spacers are formed in the gate apertures at edges of the patterned gates on the top surface of the insulating layer. The spacers are used as masks for etching the insulating layer and forming a plurality of pores in the insulating layer. The pores are plated with a filament material that extends from the insulating pores, into the gate apertures, and creates a plurality of filaments. The spacers are then removed. The multi-layer structure can further include a conductivity layer on at least a portion of a top surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.