Method for manufacturing semiconductor device with semiconductor region inserted into trench
US7026248B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2003 |
| Grant date | Apr 11, 2006 |
| Priority date | — |
| Expiry date | Oct 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for manufacturing a semiconductor device of the present invention, a portion of a first epitaxial layer formed in a trench in a silicon substrate is removed by vapor phase etching using a halogenated compound or hydrogen. In this removing process, the portion of the first epitaxial layer is removed at a predetermined temperature higher than that during epitaxial growth of the first epitaxial layer and at a predetermined pressure higher than that during epitaxial growth of the first epitaxial layer. Therefore, stress that would otherwise be concentrated at a bottom portion of the trench is relaxed because rearrangement of the silicon atoms increases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.