Shoichi Yamauchi
35Patents
10h-index
35Co-inventors
75Inventor score
Filing activity: Apr 28, 1998 → Mar 24, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6191007A | Method for manufacturing a semiconductor substrate | Electricity | 510 | Expired |
| US6534380B1 | Semiconductor substrate and method of manufacturing the same | Emerging Cross-Sectional Technologies | 233 | Expired |
| US6251754A | Semiconductor substrate manufacturing method | Electricity | 186 | Expired |
| US6495294B1 | Method for manufacturing semiconductor substrate having an epitaxial film in the trench | Electricity | 46 | Expired |
| US6495883B2 | Trench gate type semiconductor device and method of manufacturing | Electricity | 38 | Expired |
| US7170119B2 | Vertical type semiconductor device | Electricity | 31 | Expired |
| US6836001B2 | Semiconductor device having epitaxially-filled trench and method for manufacturing semiconductor device having epitaxially-filled trench | Electricity | 20 | Expired |
| US6406982B2 | Method of improving epitaxially-filled trench by smoothing trench prior to filling | Electricity | 15 | Expired |
| US7811907B2 | Method for manufacturing semiconductor device and epitaxial growth equipment | Electricity | 14 | Active |
| US7642178B2 | Semiconductor device, method for manufacturing the same and method for evaluating the same | Electricity | 10 | Active |
| US7601603B2 | Method for manufacturing semiconductor device | Electricity | 9 | Expired |
| US7417284B2 | Semiconductor device and method of manufacturing the same | Electricity | 7 | Expired |
| US7342265B2 | Vertical-type semiconductor device having repetitive-pattern layer | Electricity | 7 | Expired |
| US7037789B2 | Stabilization of dopant concentration in semiconductor device having epitaxially-filled trench | Electricity | 6 | Expired |
| US7553731B2 | Method of manufacturing semiconductor device | Electricity | 4 | Active |
| USRE44236E1 | Method for manufacturing semiconductor device | General | 4 | Active |
| US7465990B2 | Semiconductor device having super junction structure | Electricity | 4 | Expired |
| US7633123B2 | Semiconductor device having super junction structure | Electricity | 3 | Active |
| US7364980B2 | Manufacturing method of semiconductor substrate | Electricity | 2 | Active |
| US6642577B2 | Semiconductor device including power MOSFET and peripheral device and method for manufacturing the same | Electricity | 2 | Expired |
| US10550040B2 | Red zirconia sintered body and method for manufacturing the same | Chemistry; Metallurgy | 2 | Active |
| US7063751B2 | Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the corners | Electricity | 2 | Expired |
| US7026248B2 | Method for manufacturing semiconductor device with semiconductor region inserted into trench | Electricity | 1 | Expired |
| US7517771B2 | Method for manufacturing semiconductor device having trench | Electricity | 1 | Active |
| US9919971B2 | Zirconia sintered body and use thereof | Chemistry; Metallurgy | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.