Method of manufacturing semiconductor device using thermal treatment that features lower speed wafer rotation at low temperatures and higher speed wafer rotation at high temperatures
US7026260B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 13, 2004 |
| Grant date | Apr 11, 2006 |
| Priority date | — |
| Expiry date | Jul 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique capable of preventing breakage of a semiconductor wafer in a single-wafer RTP apparatus is provided. Open-loop control is made in a temperature rising process, in which the temperature of the semiconductor wafer is 500° C. or lower, and a revolution speed of the semiconductor wafer is relatively reduced to 100 rpm or lower even if the bowing of the semiconductor wafer occurs. Therefore, a centrifugal force exerted on the semiconductor wafer is reduced, whereby it becomes possible to prevent the semiconductor wafer from dropping from a stage of the single-wafer RTP apparatus. Additionally, closed-loop control is made in the temperature rising process, in which the temperature of the semiconductor wafer is higher than 500° C., and in a main treatment process, and further the revolution speed of the semiconductor wafer is relatively increased. By so doing, the almost uniform in-plane temperature of the semiconductor wafer can be achieved and the bowing of the semiconductor wafer can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.