Semiconductor device and a method for fabricating a semiconductor device

US7026547B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Klaus Goller · Dresden, DE
• Stefan Eckert · Dresden, DE
• Anja Oesinghaus · Dresden, DE

Key dates

• Filing date: Jan 21, 2005
• Grant date: Apr 11, 2006
• Expiry date: Jan 21, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/19041
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device (10) includes a semiconductor component integrated in a semiconductor substrate and a conductive pad (110) arranged on top of the semiconductor device (10). The conductive pad is electrically connected with the semiconductor component. The pad is arranged for connecting the semiconductor device (10) externally. A dielectric material (310) is positioned between the conductive pad (110) and a buried conductive layer (20) of the semiconductor device. The dielectric material (310) comprises a stress blocking structure.