Transistor device having a delafossite material
US7026713B2 · kind B2 · utility
37Cited by
4References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2003 |
| Grant date | Apr 11, 2006 |
| Priority date | — |
| Expiry date | Dec 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6734
Abstract
A transistor device includes a channel of p-type substantially transparent delafossite material. Source and drain contacts are interfaced to the channel. Gate dielectric is between a gate contact and the channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.