Randy Hoffman
58Patents
22h-index
35Co-inventors
84Inventor score
Filing activity: Nov 27, 2002 → Apr 29, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7297977B2 | Semiconductor device | Emerging Cross-Sectional Technologies | 4,024 | Expired |
| US7282782B2 | Combined binary oxide semiconductor device | Electricity | 3,974 | Expired |
| US7462862B2 | Transistor using an isovalent semiconductor oxide as the active channel layer | Electricity | 3,939 | Expired |
| US7339187B2 | Transistor structures | Electricity | 275 | Expired |
| US7732251B2 | Method of making a semiconductor device having a multicomponent oxide | Emerging Cross-Sectional Technologies | 254 | Active |
| US7189992B2 | Transistor structures having a transparent channel | Electricity | 240 | Expired |
| US8203144B2 | Semiconductor device having a metal oxide channel | Emerging Cross-Sectional Technologies | 174 | Active |
| US7145174B2 | Semiconductor device | Electricity | 160 | Expired |
| US7382421B2 | Thin film transistor with a passivation layer | Electricity | 156 | Expired |
| US8647031B2 | Method of making a semiconductor device having a multicomponent oxide | Emerging Cross-Sectional Technologies | 149 | Active |
| US7262463B2 | Transistor including a deposited channel region having a doped portion | Electricity | 135 | Expired |
| US7888207B2 | Transistor structures and methods for making the same | Electricity | 133 | Active |
| US7250930B2 | Transparent active-matrix display | Electricity | 68 | Expired |
| US7564055B2 | Transistor including a deposited channel region having a doped portion | Electricity | 54 | Active |
| US7642573B2 | Semiconductor device | Electricity | 53 | Active |
| US7838348B2 | Semiconductor device | Electricity | 50 | Active |
| US7242039B2 | Semiconductor device | Electricity | 48 | Expired |
| US7427776B2 | Thin-film transistor and methods | Electricity | 41 | Expired |
| US7374984B2 | Method of forming a thin film component | Electricity | 38 | Expired |
| US7026713B2 | Transistor device having a delafossite material | Electricity | 37 | Expired |
| US7309895B2 | Semiconductor device | Electricity | 26 | Expired |
| US7626201B2 | Semiconductor device | Electricity | 24 | Active |
| US7629191B2 | Semiconductor device | Electricity | 20 | Active |
| US7285501B2 | Method of forming a solution processed device | Electricity | 20 | Expired |
| US7547591B2 | Semiconductor device | Electricity | 17 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.