Scatterometry alignment for imprint lithography
US7027156B2 · kind B2 · utility
62Cited by
159References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2002 |
| Grant date | Apr 11, 2006 |
| Priority date | — |
| Expiry date | Jul 11, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/00
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
Described are methods for patterning a substrate by imprint lithography. Imprint lithography is a process in which a liquid is dispensed onto a substrate. A template is brought into contact with the liquid and the liquid is cured. The cured liquid includes an imprint of any patterns formed in the template. Alignment of the template with a previously formed layer on a substrate, in one embodiment, is accomplished by using scatterometry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.