Forming chemical vapor depositable low dielectric constant layers
US7029723B2 · kind B2 · utility
1Cited by
5References
5Claims
0Family size
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Key dates
| Filing date | Jan 7, 2003 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Jan 7, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Carborane may be used as a precursor to form low dielectric constant dielectrics. The carborane material may be modified to enable it to be deposited by chemical vapor deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.