Patent · US Expired

Composition and method for forming doped A-site deficient thin-film manganate layers on a substrate

US7029724B1 · kind B1 · utility

0Cited by
20References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 20, 2000
Grant dateApr 18, 2006
Priority date
Expiry dateJul 20, 2020

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/1107
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A method of forming an A site deficient thin film manganate material on a substrate from corresponding precursor(s), comprising liquid delivery and flash vaporization thereof to yield a precursor vapor, and transporting the precursor vapor to a chemical vapor deposition reactor for formation of an A site deficient manganate thin film on a substrate. The invention also contemplates a device comprising an A site deficient manganate thin film, wherein the manganate layer is formed on the substrate by such a process and is of the formula LaxMyMnO3, where M=Mg, Ca, Sr, or Ba, and (x+y)<1.0, and preferably from about 0.5 to about 0.99.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.