Magnetic sensor having free layer additionally provided with magnetic anisotropy by shape anisotropy
US7029771B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2003 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Mar 7, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1193
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An intermediate region is formed at a central portion of an element in a track width direction, and an antiferromagnetic layer is not provided at the intermediate region. Accordingly, a sense current can be prevented from being shunted to the intermediate region, and as a result, improvement in reproduction output and strength against magnetic electrostatic damage can be realized. In addition, since the thickness of the central portion of the element is decreased, trend toward narrower gap can be realized. Furthermore, since the direction of magnetization of a free magnetic layer is oriented in the track width direction by shape anisotropy, means for orienting the magnetization is not necessary, and hence the structure and manufacturing method of the element can be simplified.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.