Patent · US Expired

Attenuating phase shift mask blank and photomask

US7029803B2 · kind B2 · utility

40Cited by
9References
50Claims
0Family size

Assignees

Inventors

Key dates

Filing dateSep 5, 2003
Grant dateApr 18, 2006
Priority date
Expiry dateDec 8, 2023

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/32
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

The present invention relates to attenuating phase shift mask blanks for use in lithography, a method of fabricating such a mask blank.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.