Attenuating phase shift mask blank and photomask
US7029803B2 · kind B2 · utility
40Cited by
9References
50Claims
0Family size
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Key dates
| Filing date | Sep 5, 2003 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Dec 8, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/32
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to attenuating phase shift mask blanks for use in lithography, a method of fabricating such a mask blank.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.