Method for fabricating semiconductor device
US7029984B2 · kind B2 · utility
4Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 25, 2005 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | May 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/00
Abstract
A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer. The film deposition temperature of the first film deposition process is set to at least 600° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.