Method for making a SOI semiconductor substrate with thin active semiconductor layer
US7029991B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2001 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Sep 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention concerns a method comprising: 1) a first phase including steps which consist in forming in the upper part of a first initial semiconductor substrate a first layer of insulating material above a sectional plane of said first substrate, contacting the first layer of insulating material with the insulating upper part of a second initial substrate, so as to form a single layer of insulating material, a break at the sectional plane, so as to obtain an intermediate semiconductor substrate on the single insulating material layer; then, 2) in a second phase which consists in forming in the intermediate semiconductor substrate an additional insulating material layer adjacent to the single insulating material and topped with an upper layer of a final semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.