Method for forming a titanium nitride layer
US7030015B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Sep 16, 2004 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Sep 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a titanium nitride layer. A pre-heating step is performed, wherein a substrate is placed in a chamber comprising inert gas with a pre-heating pressure between 0.1˜3 torr. A TiN deposition step is then performed, wherein the substrate is placed in a reactive gas at least comprising NH3 and TiCl4, and the first TiN deposition step has a reactive pressure of more than 5 torr and a reactive temperature of more than 500° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.