Etching method
US7030028B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 26, 2001 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Jun 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dual damascene structure with a lesser degree of shoulder loss is achieved. In a method for forming a dual damascene structure having a shoulder in an organic low k film layer by dry-etching the organic low k film layer 208 and a mask layer 210 formed over the organic low k film 208 using at least two different mixed gases, a first step in which the mask layer is etched using a first process gas and then the organic low k film layer is etched into a predetermined depth by continuously using the first process gas and a second step following the first step, in which the organic low k film layer is etched using a second process gas are executed. Since a protective wall is formed at a side wall of a via during the first step, the extent of the shoulder loss occurring in the junction region where a trench and a via form a junction can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.