Process for deposition of a thin layer on an oxidized layer of a substrate
US7030043B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2005 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Apr 13, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin layer comprising at least a metal and a non-metallic chemical element is deposited on an oxidized layer of a substrate arranged in a reactor. The thin layer is formed by a plurality of superposed atomic layers formed by repetition of a reaction cycle comprising at least a first step of injecting a first halogenated metallic reagent into the reactor, a first reactor purging step, a second step of injecting a second reagent comprising the non-metallic chemical element into the reactor and a second reactor purging step. The process comprises, after each deposition of an atomic layer, at least one densification sequence of the atomic layer comprising a third purging step, an additional injection step of the second reagent and a fourth purging step. The time length of a densification sequence is substantially longer than the time length of a reaction cycle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.