Jean-Francois Damlencourt
15Patents
6h-index
12Co-inventors
55Inventor score
Filing activity: Apr 13, 2005 → Mar 10, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7598145B2 | Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germanium | Electricity | 49 | Active |
| US7601570B2 | Method for producing a device comprising a structure equipped with one or more microwires or nanowires based on a Si and Ge compound by germanium condensation | Electricity | 27 | Active |
| US8349667B2 | Method for stabilizing germanium nanowires obtained by condensation | Electricity | 19 | Active |
| US8513125B2 | Manufacturing a microelectronic device comprising silicon and germanium nanowires integrated on a same substrate | Electricity | 18 | Active |
| US7427779B2 | Microstructure for formation of a silicon and germanium on insulator substrate of Si1-XGeX type | Electricity | 14 | Active |
| US9040391B2 | Process for producing localised GeOI structures, obtained by germanium condensation | Electricity | 8 | Active |
| US7759175B2 | Fabrication method of a mixed substrate and use of the substrate for producing circuits | Electricity | 3 | Active |
| US7972971B2 | Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germanium | Electricity | 2 | Active |
| US7030043B2 | Process for deposition of a thin layer on an oxidized layer of a substrate | Chemistry; Metallurgy | 1 | Expired |
| US7989327B2 | Manufacturing method for a semi-conductor on insulator substrate comprising a localised Ge enriched step | Electricity | 1 | Active |
| US8247313B2 | Method for preparing a germanium layer from a silicon-germanium-on-isolator substrate | Electricity | 1 | Active |
| US7494831B2 | Process for making stacks of islands made of one semiconducting material encapsulated in another semiconducting material | Electricity | 0 | Active |
| US9991548B2 | Bipolar li-ion battery with improved leaktightness and associated method of production | Emerging Cross-Sectional Technologies | 0 | Active |
| US7648893B2 | Method for manufacturing a semiconductor-on-insulator substrate for microelectronics and optoelectronics | Electricity | 0 | Active |
| US10622640B2 | Current collector with integrated leak-proofing means, bipolar battery comprising such a collector | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.