Low k and ultra low k SiCOH dielectric films and methods to form the same
US7030468B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2004 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Mar 15, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Dielectric materials including elements of Si, C, O and H having specific values of mechanical properties (tensile stress, elastic modulus, hardness cohesive strength, crack velocity in water) that result in a stable ultra low k film which is not degraded by water vapor or integration processing are provided. The dielectric materials have a dielectric constant of about 2.8 or less, a tensile stress of less than 45 MPa, an elastic modulus from about 2 to about 15 GPa, and a hardness from about 0.2 to about 2 GPa. Electronic structures including the dielectric materials of the present invention as well as various methods of fabricating the dielectric materials are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.