Semiconductor device having aluminum and metal electrodes and method for manufacturing the same
US7030496B2 · kind B2 · utility
8Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2004 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Jun 29, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate; an aluminum electrode disposed on the substrate; a protection film disposed on the aluminum electrode; an opening disposed on the protection film for exposing the aluminum electrode; and a metal electrode disposed on a surface of the aluminum electrode through the opening. The aluminum electrode includes a concavity disposed under the opening. The aluminum electrode disposed at the concavity has a thickness equal to or larger than a depth of the concavity. The surface of the aluminum electrode includes multiple concavities and multiple convexities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.