Semiconductor device for adjusting threshold value shift due to short channel effect
US7030637B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2003 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Oct 11, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/242
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A semiconductor device detects and adjusts leakage current dependent on threshold voltage of an integrated semiconductor device. To adjust the threshold voltage variation due to uncertainties in the channel length induced by the fabrication process (short channel effect) in the semiconductor a comparison between small and long channel devices is proposed. According to the comparison result, a bias potential is provided to the semiconductor device to adjust the threshold voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.