Non-volatile semiconductor memory and driving method
US7031192B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2003 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Mar 8, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A data control unit is used to proved program, erase and verify signals to a non-volatile metal-oxide3-nitride-oxide-semiconductor (MONOS) memory. The data control unit comprises a plurality of sub-units that each contains a sense amplifier, two bi-directional flip-flop latches coupled in series and a program, erase and verify circuit. The two flip-flop latches each perform a task as a master latch or a slave latch depending on the memory operation. The program, erase and verify circuit in each sub-unit are connected together in a serial fashion such that multiple verification results are accumulated into one final result. Control signals are exchanged between a chip control unit and the data control unit to perform specified memory operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.