Compositions for chemical mechanical planarization of tantalum and tantalum nitride
US7033409B2 · kind B2 · utility
0Cited by
39References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2003 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Sep 22, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09G1/02
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention relates to compositions for the chemical mechanical planarization (“CMP”) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.