Crystal growth method for nitride semiconductor and formation method for semiconductor device
US7033436B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2002 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Apr 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming a number of island crystal regions during a first crystal growth phase and continuing growth of the island crystal regions during a second crystal growth phase while bonding of boundaries of the island crystal regions occurs. The second crystal growth phase can include a crystal growth rate that is higher than the crystal growth rate of the first crystal growth phase and/or a temperature that is lower than the first crystal growth phase. This can reduce the density of dislocations, thereby improving the performance and service life of a semiconductor device which is formed on a nitride semiconductor made in accordance with an embodiment of the present invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.