Method for making semiconductor device including band-engineered superlattice
US7033437B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2003 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Feb 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A method is for making a semiconductor device by forming a superlattice that, in turn, includes a plurality of stacked groups of layers. The method may also include forming regions for causing transport of charge carriers through the superlattice in a parallel direction relative to the stacked groups of layers. Each group of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions so that the superlattice may have a higher charge carrier mobility in the parallel direction than would otherwise occur. The superlattice may also have a common energy band structure therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.