Growth of a single-crystal region of a III-V compound on a single-crystal silicon substrate
US7033438B2 · kind B2 · utility
3Cited by
4References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 7, 2003 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Nov 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for growing a single-crystal region of a III-V compound on a surface corresponding to a crystallographic plane of a single-crystal silicon substrate, including the steps of growing by epitaxy on the substrate a single-crystal germanium layer; etching in a portion of the thickness of the germanium layer an opening, the bottom of which corresponds to a single surface inclined with respect to the cristallographic plane or to several surfaces inclined with respect to the cristallographic plane; and growing the single-crystal III-V compound on the bottom of the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.